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DSS4320T
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
* * * * * Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary PNP Type Available (DSS5320T) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM ICRP IC IB Value 20 20 5 5 3 2 0.5 Unit V V V A A A A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Repetitive Peak Pulse Current (Note 3) Continuous Collector Current Base Current
Thermal Characteristics
Characteristic Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Operating and Storage Temperature Range
Notes: 1. 2. 3. 4.
Symbol PD RJA TJ, TSTG
Value 600 209 -55 to +150
Unit mW C/W C
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Operated under pulse conditions: Pulse width 100ms, duty cycle 0.25. Device mounted on FR-4 PCB; with minimum recommended pad layout.
DSS4320T
Document number: DS31621 Rev. 2 - 2
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DSS4320T Electrical Characteristics
Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage ON CHARACTERISTICS (Note 5) @TA = 25C unless otherwise specified Symbol ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO Min 20 20 5 220 220 220 200 150 100 Typ 70 35 Max 100 50 100 70 120 230 210 310 105 1.1 1.2 1.2 35 Unit nA A nA V V V Test Conditions VCB = 20V, IE = 0 VCB = 20V, IE = 0, TA = 150C VEB = 5V, IC = 0 IC = 100A IC = 10mA IE = 100A VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 2V, IC = 3A IC = 0.5A, IB = 50mA IC = 1A, IB = 50mA IC = 2A, IB = 40mA IC = 2A, IB = 200mA IC = 3A, IB = 300mA IE = 2A, IB = 200mA IC = 2A, IB = 40mA IC = 3A, IB = 300mA VCE = 2V, IC = 1A VCE = 5V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz
NEW PRODUCT
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
mV
Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance
Notes:
RCE(SAT) VBE(SAT) VBE(ON) fT Cob
m V V V MHz pF
5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
800 700
10
PD , POWER DISSIPATION (W)
600 500 400 300 200 100 0 0
RJA = 209C/W
IC, COLLECTOR CURRENT (A)
Pw = 10ms
1
Pw = 100ms
0.1
DC
0.01
25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
0.001 0.1
1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
DSS4320T
Document number: DS31621 Rev. 2 - 2
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(c) Diodes Incorporated
DSS4320T
1.8 1.6 IC, COLLECTOR CURRENT (A) 1.4 1.2 1.0
IB = 3mA IB = 5mA
1,000
VCE = 2V TA = 150C
hFE, DC CURRENT GAIN
T A = 85C T A = 25C T A = -55C
IB = 4mA
100
0.8 0.6 0.4
IB = 1mA IB = 2mA
NEW PRODUCT
0.2 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2
VCE = 2V
10 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current
1
IC/IB = 10
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
1.0
0.1
TA = 150C TA = 85C T A = 25C
0.8
T A = -55C
0.6
TA = 25C
0.01
T A = -55C
0.4
T A = 85C
0.2
TA = 150C
0.001 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current
0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
IC/IB = 10
1,000
f = 1MHz
1.0 CAPACITANCE (pF)
0.8
T A = -55C
100
Cibo
0.6
TA = 25C TA = 85C TA = 150C
0.4
10
C obo
0.2 0 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current
1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Capacitance Characteristics
DSS4320T
Document number: DS31621 Rev. 2 - 2
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November 2008
(c) Diodes Incorporated
DSS4320T
1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz)
100
10
NEW PRODUCT
VCE = 5V f = 100MHz
1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Gain-Bandwidth Product vs. Collector Current
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05
D = 0.9 RJA(t) = r(t) * RJA RJA = 190C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DSS4320T-7
Notes:
(Note 6) Case SOT-23 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
ZN4
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
DSS4320T
Document number: DS31621 Rev. 2 - 2
4 of 5 www.diodes.com
November 2008
(c) Diodes Incorporated
DSS4320T Package Outline Dimensions
A
BC
H
NEW PRODUCT
K D J F G
K1 L
M
SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z
C
Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DSS4320T
Document number: DS31621 Rev. 2 - 2
5 of 5 www.diodes.com
November 2008
(c) Diodes Incorporated

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